中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electromagnetic-field-induced resonant structures for an open rectangular quantum dot

文献类型:期刊论文

作者G. H. Zhou ; Y. Li
刊名European Physical Journal B
出版日期2005
卷号46期号:1页码:127-132
关键词conductance quantization attractive impurity transport fluctuations irradiation resistance scattering wire
ISSN号1434-6028
中文摘要We study theoretically the electron transport properties for an open rectangular quantum dot under an external electromagnetic field illumination in the ballistic regime. Using the effective mass free-electron approximation, the scattering matrix for the system has been formulated by the time-dependent mode-match method. Some interesting properties of the electron transmission have been demonstrated through serval numerical examples. The dependence of electron transmission on the electron incident energy is found to exhibit Fano dip structures due to the field-induced intersubband scatterings into quasibound states in the dot. Moreover, with an appropriate incident energy the electron transmission as a function of the field frequency and/or amplitude shows a rich structure. Our results suggest that the electron transport properties of an open rectangular quantum dot are affected by the interplay effects between the nonadiabatic dot-lead connection and the applied field.
原文出处://WOS:000232039200013
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/35291]  
专题金属研究所_中国科学院金属研究所
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G. H. Zhou,Y. Li. Electromagnetic-field-induced resonant structures for an open rectangular quantum dot[J]. European Physical Journal B,2005,46(1):127-132.
APA G. H. Zhou,&Y. Li.(2005).Electromagnetic-field-induced resonant structures for an open rectangular quantum dot.European Physical Journal B,46(1),127-132.
MLA G. H. Zhou,et al."Electromagnetic-field-induced resonant structures for an open rectangular quantum dot".European Physical Journal B 46.1(2005):127-132.

入库方式: OAI收割

来源:金属研究所

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