C and Si ion implantation and the origins of yellow luminescence in GaN
文献类型：期刊论文
| 作者 | L. Dai ; G. Z. Ran ; J. C. Zhang ; X. F. Duan ; W. C. Lian ; G. G. Qin |
| 刊名 | Applied Physics a-Materials Science & Processing
 |
| 出版日期 | 2004 |
| 卷号 | 79期号:1页码:139-142 |
| ISSN号 | 0947-8396 |
| 关键词 | detected magnetic-resonance vapor-phase epitaxy undoped gan photoluminescence vacancies nitrides |
| 中文摘要 | We have studied the influence of C and Si ion implantation with different implantation doses on yellow luminescence (YL) from GaN. Three kinds of GaN samples were used. In their as-grown states, #1 samples had strong YL, #2 samples had no YL, while #3 samples had weak YL. Our experimental results show that: (i) after annealing at 950 degreesC, the YL intensity for Si ion implanted #1 sample decreased with increasing implantation dose, while that for C ion implanted #1 sample exhibited a reverse rule; (ii) for #2 samples, C ion implantation produced much stronger YL than Si ion implantation did after annealing at 950 degreesC; (iii) the YL intensity sequence for Si ion implanted and 950 degreesC annealed #1, #2, and #3 samples was consistent with that for the unimplanted #1, #2, and #3 samples. However, the YL intensity sequence for the C ion implanted and 950 degreesC annealed #1, #2, and #3 samples reversed with that for the unimplanted ones. In order to explain all these phenomena, we suggested a physical model which claims that the deep C center is another important origin of YL in GaN, and during C ion implantation, the C ion prefers to combine with a V-Ga to form a C-Ga. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35335]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | L. Dai,G. Z. Ran,J. C. Zhang,et al. C and Si ion implantation and the origins of yellow luminescence in GaN[J]. Applied Physics a-Materials Science & Processing,2004,79(1):139-142. |
| APA | L. Dai,G. Z. Ran,J. C. Zhang,X. F. Duan,W. C. Lian,&G. G. Qin.(2004).C and Si ion implantation and the origins of yellow luminescence in GaN.Applied Physics a-Materials Science & Processing,79(1),139-142. |
| MLA | L. Dai,et al."C and Si ion implantation and the origins of yellow luminescence in GaN".Applied Physics a-Materials Science & Processing 79.1(2004):139-142. |
入库方式： OAI收割
来源：金属研究所
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