Effect of magnetic metal cluster doping on dielectric property of LaAlO3 thin films prepared by pulsed laser deposition
文献类型：期刊论文
| 作者 | H. Jiang ; X. Y. Qiu ; G. L. Yuan ; H. Zhu ; J. M. Liu |
| 刊名 | Materials Science in Semiconductor Processing
 |
| 出版日期 | 2004 |
| 卷号 | 7期号:4-6页码:237-241 |
| 关键词 | dielectric capacitance magnetism nanoparticle percolation-threshold critical-behavior gate dielectrics constant composites conductivity transition |
| ISSN号 | 1369-8001 |
| 中文摘要 | The thin films of Ni-doped dielectric LaAlO3 (LAO) by a co-ablation of magnetic metal Ni and dielectric LAO on silicon-based substrates have been prepared by pulsed laser deposition. A significant enhancement of dielectric constant of LAO upon a Ni doping is observed. Furthermore, the dielectric modulation by applying a magnetic field to the samples is verified, obviously due to the ferromagnetism of Ni metal clusters embedded in the LAO thin films. A series of microstructural and dielectric characterizations on the as-prepared thin films has been performed and the mechanism underlying the dielectric enhancement upon the Ni doping is discussed. (C) 2004 Elsevier Ltd. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35387]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | H. Jiang,X. Y. Qiu,G. L. Yuan,et al. Effect of magnetic metal cluster doping on dielectric property of LaAlO3 thin films prepared by pulsed laser deposition[J]. Materials Science in Semiconductor Processing,2004,7(4-6):237-241. |
| APA | H. Jiang,X. Y. Qiu,G. L. Yuan,H. Zhu,&J. M. Liu.(2004).Effect of magnetic metal cluster doping on dielectric property of LaAlO3 thin films prepared by pulsed laser deposition.Materials Science in Semiconductor Processing,7(4-6),237-241. |
| MLA | H. Jiang,et al."Effect of magnetic metal cluster doping on dielectric property of LaAlO3 thin films prepared by pulsed laser deposition".Materials Science in Semiconductor Processing 7.4-6(2004):237-241. |
入库方式： OAI收割
来源：金属研究所
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