Study on the effects of well number on temperature characteristics in 1.3-mu m InGaAsP-InP quantum-well lasers
文献类型：期刊论文
| 作者 | J. Y. Jin ; D. C. Tian ; J. Shi ; T. N. Li |
| 刊名 | Infrared Physics & Technology
 |
| 出版日期 | 2004 |
| 卷号 | 45期号:3页码:209-215 |
| 关键词 | MOVPE InGaAsP/InGaAsP SL-MQW well number characteristic temperature semiconductor lasers semiconductor-lasers dfb laser operation amplifiers design gain |
| ISSN号 | 1350-4495 |
| 中文摘要 | Effects of well number on temperature characteristics in 1.3-mum InGaAsP-InP multi-quantum-well lasers have been investigated. A smaller well number is suitable for lower threshold current and higher differential quantum efficiency at 25 degreesC, while larger well number produces better performances at 85 degreesC. Furthermore, lasers with a larger well number can achieve a less output power penalty at high temperature. For the first time, a theoretical model has been established to precisely explain the relationship between the characteristic temperature of threshold current and that of external differential efficiency. (C) 2003 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35390]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | J. Y. Jin,D. C. Tian,J. Shi,et al. Study on the effects of well number on temperature characteristics in 1.3-mu m InGaAsP-InP quantum-well lasers[J]. Infrared Physics & Technology,2004,45(3):209-215. |
| APA | J. Y. Jin,D. C. Tian,J. Shi,&T. N. Li.(2004).Study on the effects of well number on temperature characteristics in 1.3-mu m InGaAsP-InP quantum-well lasers.Infrared Physics & Technology,45(3),209-215. |
| MLA | J. Y. Jin,et al."Study on the effects of well number on temperature characteristics in 1.3-mu m InGaAsP-InP quantum-well lasers".Infrared Physics & Technology 45.3(2004):209-215. |
入库方式： OAI收割
来源：金属研究所
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