Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs
文献类型：期刊论文
| 作者 | Z. C. Li ; H. Zhang ; Y. B. Xu |
| 刊名 | Materials Science in Semiconductor Processing
 |
| 出版日期 | 2004 |
| 卷号 | 7期号:1-2页码:19-25 |
| 关键词 | amorphous GaAs electron beam irradiation crystallization electron microscopy induced epitaxial regrowth silicon crystallization ge irradiation kinetics si amorphization cazrti2o7 damage |
| ISSN号 | 1369-8001 |
| 中文摘要 | In situ observation of the nucleation and growth stimulated by an electron beam in amorphous GaAs was performed using a high-resolution electron microscopy. The results showed that the crystallization was closely related to the current density of the electron beam. Crystallization could not take place when the current density was 50 pA/cm(2), nanocrystals with the random orientation formed under the 74 pA/cm(2) electron beam, large grains and twining structure formed during the crystallization induced by the 93 pA/cm(2) electron beam. Ionization process and electron-beam heating were suggested to be the possible mechanisms for the irradiation-induced crystallization. (C) 2004 Elsevier Ltd. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35436]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Z. C. Li,H. Zhang,Y. B. Xu. Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs[J]. Materials Science in Semiconductor Processing,2004,7(1-2):19-25. |
| APA | Z. C. Li,H. Zhang,&Y. B. Xu.(2004).Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs.Materials Science in Semiconductor Processing,7(1-2),19-25. |
| MLA | Z. C. Li,et al."Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs".Materials Science in Semiconductor Processing 7.1-2(2004):19-25. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。