中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs

文献类型:期刊论文

作者Z. C. Li ; H. Zhang ; Y. B. Xu
刊名Materials Science in Semiconductor Processing
出版日期2004
卷号7期号:1-2页码:19-25
关键词amorphous GaAs electron beam irradiation crystallization electron microscopy induced epitaxial regrowth silicon crystallization ge irradiation kinetics si amorphization cazrti2o7 damage
ISSN号1369-8001
中文摘要In situ observation of the nucleation and growth stimulated by an electron beam in amorphous GaAs was performed using a high-resolution electron microscopy. The results showed that the crystallization was closely related to the current density of the electron beam. Crystallization could not take place when the current density was 50 pA/cm(2), nanocrystals with the random orientation formed under the 74 pA/cm(2) electron beam, large grains and twining structure formed during the crystallization induced by the 93 pA/cm(2) electron beam. Ionization process and electron-beam heating were suggested to be the possible mechanisms for the irradiation-induced crystallization. (C) 2004 Elsevier Ltd. All rights reserved.
原文出处://WOS:000223542600004
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/35436]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Z. C. Li,H. Zhang,Y. B. Xu. Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs[J]. Materials Science in Semiconductor Processing,2004,7(1-2):19-25.
APA Z. C. Li,H. Zhang,&Y. B. Xu.(2004).Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs.Materials Science in Semiconductor Processing,7(1-2),19-25.
MLA Z. C. Li,et al."Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs".Materials Science in Semiconductor Processing 7.1-2(2004):19-25.

入库方式: OAI收割

来源:金属研究所

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