Low-temperature synthesis and characterization of GaN nanocrystals from gallium trichloride precursor
文献类型：期刊论文
| 作者 | F. S. Liu ; Q. L. Liu ; J. K. Liang ; G. B. Song ; L. T. Yang ; J. Luo ; Y. Q. Zhou ; H. W. Dong ; G. H. Rao |
| 刊名 | Journal of Materials Research
 |
| 出版日期 | 2004 |
| 卷号 | 19期号:12页码:3484-3489 |
| 关键词 | chemical-vapor-deposition single-crystalline gan raman-scattering phase epitaxy thin-films nitride layers nanowires electron nitrogen |
| ISSN号 | 0884-2914 |
| 中文摘要 | Gallium nitride (GaN) has been synthesized by reacting gallium trichloride with ammonia (NH(3)) at low temperatures ranging from 500 to 1000 degreesC for 12 h. X-ray diffraction, transmission electron microscopy, infrared, and Raman backscattering spectra revealed that the synthesized GaN powder consists of single-phase nano-sized crystallites with the wurtzite-type structure. The average size of the crystals decreases with the reaction temperature from approximately similar to63 nm at 1000 degreesC to similar to5 nm at 500 degreesC. GaOCl and epsilon-Ga(2)O(3) are the intermediate products during synthesis of the GaN. Characteristic shifts of the Raman peaks are associated with the change in crystal size. The band-edge emission of GaN at 361 nm was observed on room temperature photoluminescence spectra exclusively for the sample synthesized at 1000 degreesC, while a new and broad emission band appeared with the center ranging from 827 to 765 nm for the samples synthesized between 500 and 800 degreesC. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35451]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | F. S. Liu,Q. L. Liu,J. K. Liang,et al. Low-temperature synthesis and characterization of GaN nanocrystals from gallium trichloride precursor[J]. Journal of Materials Research,2004,19(12):3484-3489. |
| APA | F. S. Liu.,Q. L. Liu.,J. K. Liang.,G. B. Song.,L. T. Yang.,...&G. H. Rao.(2004).Low-temperature synthesis and characterization of GaN nanocrystals from gallium trichloride precursor.Journal of Materials Research,19(12),3484-3489. |
| MLA | F. S. Liu,et al."Low-temperature synthesis and characterization of GaN nanocrystals from gallium trichloride precursor".Journal of Materials Research 19.12(2004):3484-3489. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。