Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu
文献类型：期刊论文
| 作者 | L. H. Qian ; Q. H. Lu ; W. J. Kong ; K. Lu |
| 刊名 | Scripta Materialia
 |
| 出版日期 | 2004 |
| 卷号 | 50期号:11页码:1407-1411 |
| 关键词 | electrical resistivity nanocrystalline Cu relaxation of grain boundary and magnetron sputtering microstructure evolution mechanical attrition thermal-properties thin-films copper aluminium fe |
| ISSN号 | 1359-6462 |
| 中文摘要 | Electrical resistivity of grain boundaries (GBs) was determined in nanocrystalline (nc) Cu specimens prepared by magnetosputtering and subsequent annealing. Extrapolating the microstrain dependence of GB resistivity, we derived electrical resistivity of GBs in a fully-relaxed state in Cu, being 2.04 x 10(-16) Omegam(2). (C) 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35515]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | L. H. Qian,Q. H. Lu,W. J. Kong,et al. Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu[J]. Scripta Materialia,2004,50(11):1407-1411. |
| APA | L. H. Qian,Q. H. Lu,W. J. Kong,&K. Lu.(2004).Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu.Scripta Materialia,50(11),1407-1411. |
| MLA | L. H. Qian,et al."Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu".Scripta Materialia 50.11(2004):1407-1411. |
入库方式： OAI收割
来源：金属研究所
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