A top-emission organic light-emitting diode with a silicon anode and an Sm/Au cathode
文献类型:期刊论文
作者 | G. G. Qin ; A. G. Xu ; G. L. Ma ; G. Z. Ran ; Y. P. Qiao ; B. R. Zhang ; W. X. Chen ; S. K. Wu |
刊名 | Applied Physics Letters
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出版日期 | 2004 |
卷号 | 85期号:22页码:5406-5408 |
关键词 | enhanced electron injection devices electroluminescence performance films |
ISSN号 | 0003-6951 |
中文摘要 | A top-emission organic light-emitting diode (TEOLED) with a p-type silicon anode and a semitransparent samarium/gold cathode has been constructed and studied. With a structure of Al/p-Si/SiOx/N,N-'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine(N PB)/Tris-(8-hydroxyquinoline)aluminum(Alq)/LiF/Al, we have found that compared to indium-tin-oxide, the p-Si anode enhances the unbalance between electron- and hole-injection, which is a disadvantage factor for the light-emitting efficiency of the TEOLED. Selecting p-Si wafers with suitable electric resistivities and inserting an ultrathin low temperature grown SiOx layer of about 1.5 nm between the anode and NPB can effectively restrict hole-injection. Moreover, a low work function Sm/Au cathode was used to enhance electron-injection. The electroluminescence efficiency of the TEOLED depends on the thickness of the Sm layer in the cathode. A current efficiency of 0.55 cd/A and a power efficiency of 0.07 lm/W have been reached. (C) 2004 American Institute of Physics. |
原文出处 | |
公开日期 | 2012-04-14 |
源URL | [http://ir.imr.ac.cn/handle/321006/35522] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | G. G. Qin,A. G. Xu,G. L. Ma,et al. A top-emission organic light-emitting diode with a silicon anode and an Sm/Au cathode[J]. Applied Physics Letters,2004,85(22):5406-5408. |
APA | G. G. Qin.,A. G. Xu.,G. L. Ma.,G. Z. Ran.,Y. P. Qiao.,...&S. K. Wu.(2004).A top-emission organic light-emitting diode with a silicon anode and an Sm/Au cathode.Applied Physics Letters,85(22),5406-5408. |
MLA | G. G. Qin,et al."A top-emission organic light-emitting diode with a silicon anode and an Sm/Au cathode".Applied Physics Letters 85.22(2004):5406-5408. |
入库方式: OAI收割
来源:金属研究所
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