Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode
文献类型：期刊论文
| 作者 | G. Z. Ran ; Z. L. Wu ; G. L. Ma ; A. G. Xu ; Y. P. Qiao ; S. K. Wu ; B. R. Yang ; G. G. Qin |
| 刊名 | Chemical Physics Letters
 |
| 出版日期 | 2004 |
| 卷号 | 400期号:4-6页码:401-405 |
| 关键词 | 1.5 mu-m hole injection photoelectron-spectroscopy devices electroluminescence wavelength emission bilayer |
| ISSN号 | 0009-2614 |
| 中文摘要 | An indium-tin oxide anode was replaced with a p-type silicon anode in a bilayer small-molecule organic light-emitting diode. As results, the current increased largely due to the enhanced hole injection and the higher conductivity of the Si anode; the luminous efficiency decreased significantly due to carrier-induced exciton quenching and the worse charge imbalance. Ultra-thin film Of SiO2 grown on the silicon anode improved the luminous efficiency to a certain extent by restraining the hole injection; enhancing electron injection became more desired. (C) 2004 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35527]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. Z. Ran,Z. L. Wu,G. L. Ma,et al. Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode[J]. Chemical Physics Letters,2004,400(4-6):401-405. |
| APA | G. Z. Ran.,Z. L. Wu.,G. L. Ma.,A. G. Xu.,Y. P. Qiao.,...&G. G. Qin.(2004).Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode.Chemical Physics Letters,400(4-6),401-405. |
| MLA | G. Z. Ran,et al."Improvement of the charge imbalance caused by the use of a p-type silicon anode in an organic light-emitting diode".Chemical Physics Letters 400.4-6(2004):401-405. |
入库方式： OAI收割
来源：金属研究所
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