Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe
文献类型：期刊论文
| 作者 | X. X. Wu ; W. C. Zheng ; T. Sheng ; H. Zi |
| 刊名 | Materials Science and Engineering B-Solid State Materials for Advanced Technology
 |
| 出版日期 | 2004 |
| 卷号 | 107期号:2页码:186-188 |
| 关键词 | structural parameter electron paramagnetic resonance (EPR) optical spectrum crystal-field theory CuGaS2 Ni+ chalcopyrite semiconductors superposition model crystal |
| ISSN号 | 0921-5107 |
| 中文摘要 | The anion position parameter chi of NiS4 cluster formed in the ternary semiconductor CuGaS2 by substitution of Ni+ for Cu+ has been determined by studying the optical spectra and EPR data for CuGaS2:Ni+. The result (chi approximate to 0.263(1)) is consistent with the mean value of the X-ray measurement results reported in two groups of references and also with the calculated value obtained from the conservation of tetrahedral bonds (CTB) plus eta = eta(tet) rule (where eta = c/2a). So, we suggest that the anion position parameter chi in pure CuGaS2 crystal is close to the above value obtained by use of Ni+ ion probe. The optical absorption bands and g factors g(parallel to), g(perpendicular to), of CuGaS2: Ni+ are therefore explained reasonably from the anion position parameter. (C) 2003 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35640]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. X. Wu,W. C. Zheng,T. Sheng,et al. Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe[J]. Materials Science and Engineering B-Solid State Materials for Advanced Technology,2004,107(2):186-188. |
| APA | X. X. Wu,W. C. Zheng,T. Sheng,&H. Zi.(2004).Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe.Materials Science and Engineering B-Solid State Materials for Advanced Technology,107(2),186-188. |
| MLA | X. X. Wu,et al."Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe".Materials Science and Engineering B-Solid State Materials for Advanced Technology 107.2(2004):186-188. |
入库方式： OAI收割
来源：金属研究所
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