Theoretical explanation of the g factor for Cr4+ in Y2SiO5 crystal
文献类型：期刊论文
| 作者 | X. X. Wu ; W. C. Zheng ; S. Tang ; J. Zi |
| 刊名 | Solid State Communications
 |
| 出版日期 | 2004 |
| 卷号 | 131期号:2页码:93-96 |
| 关键词 | insulators points defects crystal and ligand fields electronic states (localized) electron paramagnetic resonance atomic screening constants scf functions cr4+-y2sio5 transition pressure |
| ISSN号 | 0038-1098 |
| 中文摘要 | The g factor of Cr4-- in Y2SiO5 crystal is calculated from a completed high-order perturbation formula, in which not only the conventional contribution to the g-shift Deltag(= g - g(c)) from the crystal-field mechanism, but also the contribution from the charge-transfer mechanism (which is neglected in the crystal-field theory) are considered. The calculated result shows good agreement with the observed value. It is found that the calculated Deltag due to the charge-transfer mechanism is opposite in sign and about 38% in magnitude, compared with that due to the crystal-field mechanism. So, in the studies of the g factor for a 3d(n) ion having high valence state in crystals, the contribution due to the charge-transfer mechanism should be taken into account. (C) 2004 Elsevier Ltd. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35643]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. X. Wu,W. C. Zheng,S. Tang,et al. Theoretical explanation of the g factor for Cr4+ in Y2SiO5 crystal[J]. Solid State Communications,2004,131(2):93-96. |
| APA | X. X. Wu,W. C. Zheng,S. Tang,&J. Zi.(2004).Theoretical explanation of the g factor for Cr4+ in Y2SiO5 crystal.Solid State Communications,131(2),93-96. |
| MLA | X. X. Wu,et al."Theoretical explanation of the g factor for Cr4+ in Y2SiO5 crystal".Solid State Communications 131.2(2004):93-96. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。