Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy
文献类型：期刊论文
| 作者 | W. F. Xiang ; H. B. Lu ; Z. H. Chen ; X. B. Lu ; M. He ; H. Tian ; Y. L. Zhou ; C. R. Li ; X. L. Ma |
| 刊名 | Journal of Crystal Growth
 |
| 出版日期 | 2004 |
| 卷号 | 271期号:1-2页码:165-170 |
| 关键词 | annealing reflection high-energy electron diffraction X-ray diffraction epitaxial growth laser molecular beam epitaxy LaAlO3 film thin-films buffer layers in-situ srtio3 si(100) deposition silicon mocvd |
| ISSN号 | 0022-0248 |
| 中文摘要 | The LaAlO3 films were grown epitaxially on Si (100) substrates by inserting SrO or SrTiO3 buffer layer using a computer-controlled laser molecular beam epitaxy system. Structural characterization indicated that the LaAlO3 films were two-dimensional layer-by-layer growth. The atomic force microscopy observations showed that the surfaces of the epitaxial LaAlO3 films were atomically smooth. The crystallinity of the LaAlO3 films determined by X-ray diffraction and high-resolution transmission electron microscopy was a single-crystalline structure. After being annealed at 1050 degreesC in N-2 for 5 min, the crystallinity of the LaAlO3 film improved obviously. The successful LaAlO3/SrO/Si and LaAlO3/SrTiO3/Si epitaxial growth predicted that the possibility of the development of 3D heterostructrues on Si in a new generation of microelectronics devices. (C) 2004 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35650]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | W. F. Xiang,H. B. Lu,Z. H. Chen,et al. Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy[J]. Journal of Crystal Growth,2004,271(1-2):165-170. |
| APA | W. F. Xiang.,H. B. Lu.,Z. H. Chen.,X. B. Lu.,M. He.,...&X. L. Ma.(2004).Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy.Journal of Crystal Growth,271(1-2),165-170. |
| MLA | W. F. Xiang,et al."Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy".Journal of Crystal Growth 271.1-2(2004):165-170. |
入库方式： OAI收割
来源：金属研究所
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