Temperature-dependent fatigue behaviors of ferroelectric ABO(3)-type and layered perovskite oxide thin films
文献类型:期刊论文
作者 | G. L. Yuan ; J. M. Liu ; Y. P. Wang ; D. Wu ; S. T. Zhang ; Q. Y. Shao ; Z. G. Liu |
刊名 | Applied Physics Letters
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出版日期 | 2004 |
卷号 | 84期号:17页码:3352-3354 |
关键词 | srbi2ta2o9 deposition capacitors thickness mechanism interface |
ISSN号 | 0003-6951 |
中文摘要 | The temperature-dependent dielectric and ferroelectric fatigue behaviors of ABO(3)-type perovskite thin films Pb(Zr0.52Ti0.48)O-3 (PZT) and Pb0.75La0.25TiO3 (PLT) and layered Aurivillius thin films SrBi2Ta2O9 (SBT) and Bi3.25La0.75Ti3O12 (BLT) with Pt electrodes are studied. The improved fatigue resistance of PZT and PLT at a low temperature can be explained by the defect-induced suppression of domain switch/nucleation near the film/electrode interface, which requires a long-range diffusion of defects and charges. It is argued that the fatigue effect of SBT and BLT is attributed to the competition between domain-wall pinning and depinning. The perovskitelike slabs and/or (Bi2O2)(2+) layers act as barriers for long-range diffusion of defects and charges, resulting in localization of the defects and charges. Thus, the fatigued SBT and BLT can be easily rejuvenated by a high electric field over a wide temperature range. (C) 2004 American Institute of Physics. |
原文出处 | |
公开日期 | 2012-04-14 |
源URL | [http://ir.imr.ac.cn/handle/321006/35696] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | G. L. Yuan,J. M. Liu,Y. P. Wang,et al. Temperature-dependent fatigue behaviors of ferroelectric ABO(3)-type and layered perovskite oxide thin films[J]. Applied Physics Letters,2004,84(17):3352-3354. |
APA | G. L. Yuan.,J. M. Liu.,Y. P. Wang.,D. Wu.,S. T. Zhang.,...&Z. G. Liu.(2004).Temperature-dependent fatigue behaviors of ferroelectric ABO(3)-type and layered perovskite oxide thin films.Applied Physics Letters,84(17),3352-3354. |
MLA | G. L. Yuan,et al."Temperature-dependent fatigue behaviors of ferroelectric ABO(3)-type and layered perovskite oxide thin films".Applied Physics Letters 84.17(2004):3352-3354. |
入库方式: OAI收割
来源:金属研究所
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