Improvement of 1.3-mu m GaInNAs vertical cavity surface emitting lasers grown by MOVPE
文献类型：期刊论文
| 作者 | A. W. Yue ; K. Shen ; J. Shi ; R. F. Wang |
| 刊名 | Chinese Physics Letters
 |
| 出版日期 | 2004 |
| 卷号 | 21期号:1页码:81-83 |
| 关键词 | 10 gbit/s operation |
| ISSN号 | 0256-307X |
| 中文摘要 | We report the improved performance of the conventional contact 1.3 mum GaInNAs vertical cavity surface emitting lasers (VCSELs) grown by metal-organic vapour-phase epitaxy (MOVPE). A new wet etching approach was applied in the fabrication of 1.3 mum GaInNAs oxide-confined VCSELs. The threshold current of single mode device is 1.0 mA. The multiple mode devices show very low threshold currents below 2 mA at 5-85degreesC, which were the best results for 1.3 mum GaInNAs VCSELs reported. Maximum single mode output power of 0.256 mW and the maximum multiple mode power of 0.883 mW were obtained at room temperature. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35698]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | A. W. Yue,K. Shen,J. Shi,et al. Improvement of 1.3-mu m GaInNAs vertical cavity surface emitting lasers grown by MOVPE[J]. Chinese Physics Letters,2004,21(1):81-83. |
| APA | A. W. Yue,K. Shen,J. Shi,&R. F. Wang.(2004).Improvement of 1.3-mu m GaInNAs vertical cavity surface emitting lasers grown by MOVPE.Chinese Physics Letters,21(1),81-83. |
| MLA | A. W. Yue,et al."Improvement of 1.3-mu m GaInNAs vertical cavity surface emitting lasers grown by MOVPE".Chinese Physics Letters 21.1(2004):81-83. |
入库方式： OAI收割
来源：金属研究所
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