Low threshold current 1.3-mu m GaInNAsVCSELs grown by MOVPE
文献类型：期刊论文
| 作者 | A. W. Yue ; K. Shen ; R. F. Wang ; J. Shi |
| 刊名 | Ieee Photonics Technology Letters
 |
| 出版日期 | 2004 |
| 卷号 | 16期号:3页码:717-719 |
| 关键词 | GaInNAs low threshold current vertical-cavity surface-emitting lasers (VCSELs) continuous-wave operation vertical-cavity lasers diodes |
| ISSN号 | 1041-1135 |
| 中文摘要 | The structure of the conventional contact 1.3-mum GaInNAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) was optimized and low threshold current 1.3-mum GaInNAs VCSELs grown by metal-organic vapor-phase epitaxy were reported. The idea is to optimize the active region, the doping profiles, and the pairs of p-distributed Bragg reflectors, and the detuning between the emission wavelength and the photoluminescence gain peak wavelength. The continuous-wave 1.0-mA threshold current was achieved for the single-mode VCSEL. For the multiple-mode VCSELs, the below 2-mA threshold currents at 5 degreesC-85 degreesC, the 1.13-mA threshold current at 55 degreesC, and 1.52-mA threshold current at 85 degreesC are the best results for 1.3-mum GaInNAs VCSELs. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35699]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | A. W. Yue,K. Shen,R. F. Wang,et al. Low threshold current 1.3-mu m GaInNAsVCSELs grown by MOVPE[J]. Ieee Photonics Technology Letters,2004,16(3):717-719. |
| APA | A. W. Yue,K. Shen,R. F. Wang,&J. Shi.(2004).Low threshold current 1.3-mu m GaInNAsVCSELs grown by MOVPE.Ieee Photonics Technology Letters,16(3),717-719. |
| MLA | A. W. Yue,et al."Low threshold current 1.3-mu m GaInNAsVCSELs grown by MOVPE".Ieee Photonics Technology Letters 16.3(2004):717-719. |
入库方式： OAI收割
来源：金属研究所
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