Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC
文献类型：期刊论文
| 作者 | X. D. Chen ; S. Fung ; C. C. Ling ; C. D. Beling ; M. Gong |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2003 |
| 卷号 | 94期号:5页码:3004-3010 |
| 关键词 | 6h silicon-carbide positron-annihilation defect centers |
| ISSN号 | 0021-8979 |
| 中文摘要 | Deep level transient spectroscopy has been employed to study the deep level defects introduced in n-type 6H-SiC after neutron irradiation. Deep levels situated at E-C-0.23, E-C-0.36/0.44, E-C-0.50, and E-C-0.62/0.68 eV have been detected in the temperature range of 100-450 K, which have been identified with the previously reported deep levels ED1, E-1/E-2, E-i, and Z(1)/Z(2), respectively. Thermal annealing studies of these deep levels reveal that ED1 and E-i anneal at a temperature below 350degreesC, the Z(1)/Z(2) levels anneal out at 900degreesC, while the intensity of the E-1/E-2 peaks is increased with annealing temperature, reaching a maximum at about 500-750degreesC, and finally annealing out at 1400degreesC. The possible nature of the deep levels ED1, E-1/E-2, E-i, and Z(1)/Z(2) are discussed in the context of their annealing behavior. Upon further annealing at 1600degreesC, four deep levels labeled NE1 at E-C-0.44 eV, NE2 E-C-0.53 eV, NE3 E-C-0.64 eV, and NE4 E-C-0.68 eV are produced. Evidence is given that these levels are different in their origin to E-1/E-2 and Z(1)/Z(2). (C) 2003 American Institute of Physics. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35801]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. D. Chen,S. Fung,C. C. Ling,et al. Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC[J]. Journal of Applied Physics,2003,94(5):3004-3010. |
| APA | X. D. Chen,S. Fung,C. C. Ling,C. D. Beling,&M. Gong.(2003).Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC.Journal of Applied Physics,94(5),3004-3010. |
| MLA | X. D. Chen,et al."Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC".Journal of Applied Physics 94.5(2003):3004-3010. |
入库方式： OAI收割
来源：金属研究所
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