中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Concentration of point defects in binary NiAl

文献类型:期刊论文

作者Y. L. Hao ; Y. Song ; R. Yang ; Y. Y. Cui ; D. Li ; M. Niinomi
刊名Philosophical Magazine Letters
出版日期2003
卷号83期号:6页码:375-384
关键词intermetallic compound feal high-temperature region long-range order vacancies behavior alloys phase al
ISSN号0950-0839
中文摘要A mean-field-type model was established to describe the concentration of point defects in binary NiAl by taking into account the effects of crystal expansion and off-stoichiometry. Different from some recent studies, this analysis shows that constitutional vacancies are present only in Al-rich NiAl at T = 0 K but that the vacancy concentration decreases with increasing temperature until diffusion is activated and thereafter becomes nearly independent of temperature. Such vacancy formation behaviour in Al-rich NiAl belongs to the category of metastable constitutional type according to a method of classifying vacancy formation in B2 crystals proposed in this letter.
原文出处://WOS:000184452700004
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/35844]  
专题金属研究所_中国科学院金属研究所
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GB/T 7714
Y. L. Hao,Y. Song,R. Yang,et al. Concentration of point defects in binary NiAl[J]. Philosophical Magazine Letters,2003,83(6):375-384.
APA Y. L. Hao,Y. Song,R. Yang,Y. Y. Cui,D. Li,&M. Niinomi.(2003).Concentration of point defects in binary NiAl.Philosophical Magazine Letters,83(6),375-384.
MLA Y. L. Hao,et al."Concentration of point defects in binary NiAl".Philosophical Magazine Letters 83.6(2003):375-384.

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来源:金属研究所

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