中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Metal-semiconductor transition in non-stoichiometric double perovskite Sr2FexMo2-xO6

文献类型:期刊论文

作者G. Y. Liu ; G. H. Rao ; X. M. Feng ; H. F. Yang ; Z. W. Ouyang ; W. F. Liu ; J. K. Liang
刊名Physica B-Condensed Matter
出版日期2003
卷号334期号:3-4页码:229-233
关键词non-stoichiometric double perovskite electronic transport properties crystal structure room-temperature magnetoresistance neutron powder-diffraction magnetic-properties electronic-properties sr2femoo6 transport oxide
ISSN号0921-4526
中文摘要The electronic transport properties of the ordered double perovskite oxides Sr2FexMo2-xO6 (0.8 less than or equal to x less than or equal to 1.5) have been investigated. In this system, the samples (x greater than or equal to 1.2) are semiconducting in the temperature range of 4.2 less than or equal to T less than or equal to 300 K. A metal-semiconductor transition occurs when x < 1.2 and the transition temperature T-MS decreases obviously as the Fe, content decreases. Rietveld refinement of the X-ray powder. diffraction profiles indicates that the crystal structure of the compounds Sr2FexMo2-xO6 changes from a tetragonal I4/mmm lattice to a cubic Fm (3) over barm lattice around x = 1.2. (C) 2003 Elsevier Science B.V. All rights reserved.
原文出处://WOS:000183689500001
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/35919]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
G. Y. Liu,G. H. Rao,X. M. Feng,et al. Metal-semiconductor transition in non-stoichiometric double perovskite Sr2FexMo2-xO6[J]. Physica B-Condensed Matter,2003,334(3-4):229-233.
APA G. Y. Liu.,G. H. Rao.,X. M. Feng.,H. F. Yang.,Z. W. Ouyang.,...&J. K. Liang.(2003).Metal-semiconductor transition in non-stoichiometric double perovskite Sr2FexMo2-xO6.Physica B-Condensed Matter,334(3-4),229-233.
MLA G. Y. Liu,et al."Metal-semiconductor transition in non-stoichiometric double perovskite Sr2FexMo2-xO6".Physica B-Condensed Matter 334.3-4(2003):229-233.

入库方式: OAI收割

来源:金属研究所

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