Metal-semiconductor transition in non-stoichiometric double perovskite Sr2FexMo2-xO6
文献类型:期刊论文
作者 | G. Y. Liu ; G. H. Rao ; X. M. Feng ; H. F. Yang ; Z. W. Ouyang ; W. F. Liu ; J. K. Liang |
刊名 | Physica B-Condensed Matter
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出版日期 | 2003 |
卷号 | 334期号:3-4页码:229-233 |
关键词 | non-stoichiometric double perovskite electronic transport properties crystal structure room-temperature magnetoresistance neutron powder-diffraction magnetic-properties electronic-properties sr2femoo6 transport oxide |
ISSN号 | 0921-4526 |
中文摘要 | The electronic transport properties of the ordered double perovskite oxides Sr2FexMo2-xO6 (0.8 less than or equal to x less than or equal to 1.5) have been investigated. In this system, the samples (x greater than or equal to 1.2) are semiconducting in the temperature range of 4.2 less than or equal to T less than or equal to 300 K. A metal-semiconductor transition occurs when x < 1.2 and the transition temperature T-MS decreases obviously as the Fe, content decreases. Rietveld refinement of the X-ray powder. diffraction profiles indicates that the crystal structure of the compounds Sr2FexMo2-xO6 changes from a tetragonal I4/mmm lattice to a cubic Fm (3) over barm lattice around x = 1.2. (C) 2003 Elsevier Science B.V. All rights reserved. |
原文出处 | |
公开日期 | 2012-04-14 |
源URL | [http://ir.imr.ac.cn/handle/321006/35919] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | G. Y. Liu,G. H. Rao,X. M. Feng,et al. Metal-semiconductor transition in non-stoichiometric double perovskite Sr2FexMo2-xO6[J]. Physica B-Condensed Matter,2003,334(3-4):229-233. |
APA | G. Y. Liu.,G. H. Rao.,X. M. Feng.,H. F. Yang.,Z. W. Ouyang.,...&J. K. Liang.(2003).Metal-semiconductor transition in non-stoichiometric double perovskite Sr2FexMo2-xO6.Physica B-Condensed Matter,334(3-4),229-233. |
MLA | G. Y. Liu,et al."Metal-semiconductor transition in non-stoichiometric double perovskite Sr2FexMo2-xO6".Physica B-Condensed Matter 334.3-4(2003):229-233. |
入库方式: OAI收割
来源:金属研究所
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