中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth mode of the SnO2 nanobelts synthesized by rapid oxidation

文献类型:期刊论文

作者X. L. Ma ; Y. Li ; Y. L. Zhu
刊名Chemical Physics Letters
出版日期2003
卷号376期号:5-6页码:794-798
关键词semiconductor nanowires laser-ablation sensitivity oxides tin
ISSN号0009-2614
中文摘要One-dimensional SnO2 nanobelts have been prepared in large scale via rapid oxidation of elemental tin at the temperature range from 1080 to 1250 degreesC. Transmission electron microscopic studies show that the as-synthesized SnO2 nanobelts appear to be single crystals but some of which are found to have steps at the surface of the nanobelts. Atomic imaging stretching over the belt width gives the trace that the growth might be associated with a layer-by-layer mode. (C) 2003 Published by Elsevier B.V.
原文出处://WOS:000184565900039
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/35966]  
专题金属研究所_中国科学院金属研究所
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X. L. Ma,Y. Li,Y. L. Zhu. Growth mode of the SnO2 nanobelts synthesized by rapid oxidation[J]. Chemical Physics Letters,2003,376(5-6):794-798.
APA X. L. Ma,Y. Li,&Y. L. Zhu.(2003).Growth mode of the SnO2 nanobelts synthesized by rapid oxidation.Chemical Physics Letters,376(5-6),794-798.
MLA X. L. Ma,et al."Growth mode of the SnO2 nanobelts synthesized by rapid oxidation".Chemical Physics Letters 376.5-6(2003):794-798.

入库方式: OAI收割

来源:金属研究所

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