Electroluminescence and photoluminescence from scored Si-rich SiO2 film/p-Si structure
文献类型：期刊论文
| 作者 | G. Z. Ran ; Y. K. Sun ; Y. Chen ; L. Dai ; X. M. Cui ; B. R. Zhang ; Y. P. Qiao ; Z. C. Ma ; W. H. Zong ; G. G. Qin |
| 刊名 | Chinese Physics Letters
 |
| 出版日期 | 2003 |
| 卷号 | 20期号:2页码:298-300 |
| 关键词 | visible photoluminescence amorphous sio2 porous silicon luminescence light |
| ISSN号 | 0256-307X |
| 中文摘要 | Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800 degreesC is about 6 times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer, which thus result in changes of the EL and PL spectra. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36007]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. Z. Ran,Y. K. Sun,Y. Chen,et al. Electroluminescence and photoluminescence from scored Si-rich SiO2 film/p-Si structure[J]. Chinese Physics Letters,2003,20(2):298-300. |
| APA | G. Z. Ran.,Y. K. Sun.,Y. Chen.,L. Dai.,X. M. Cui.,...&G. G. Qin.(2003).Electroluminescence and photoluminescence from scored Si-rich SiO2 film/p-Si structure.Chinese Physics Letters,20(2),298-300. |
| MLA | G. Z. Ran,et al."Electroluminescence and photoluminescence from scored Si-rich SiO2 film/p-Si structure".Chinese Physics Letters 20.2(2003):298-300. |
入库方式： OAI收割
来源：金属研究所
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