Formation of copper silicides by high dose metal vapor vacuum arc ion implantation
文献类型：期刊论文
| 作者 | C. Rong ; J. H. Zhang ; W. Z. Li |
| 刊名 | Applied Surface Science
 |
| 出版日期 | 2003 |
| 卷号 | 220期号:1-4页码:40-45 |
| 关键词 | copper silicides ion implantation defects silicon system diffusion cu3si |
| ISSN号 | 0169-4332 |
| 中文摘要 | Si(1 1 1) was implanted by copper ions with different doses and copper distribution in silicon matrix was obtained. The as-implanted samples were annealed at 300 and 540 degreesC, respectively. Formation of copper silicides in as-implanted and annealed samples were studied. Thermodynamics and kinetics of the reaction were found to be different from reaction at copper-silicon interface that was applied in conventional studies of copper-silicon interaction. The defects in silicon induced by implantation and formation of copper silicides were recognized by Si(2 2 2) X-ray diffraction (XRD). (C) 2003 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36014]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | C. Rong,J. H. Zhang,W. Z. Li. Formation of copper silicides by high dose metal vapor vacuum arc ion implantation[J]. Applied Surface Science,2003,220(1-4):40-45. |
| APA | C. Rong,J. H. Zhang,&W. Z. Li.(2003).Formation of copper silicides by high dose metal vapor vacuum arc ion implantation.Applied Surface Science,220(1-4),40-45. |
| MLA | C. Rong,et al."Formation of copper silicides by high dose metal vapor vacuum arc ion implantation".Applied Surface Science 220.1-4(2003):40-45. |
入库方式： OAI收割
来源：金属研究所
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