Crystallographic cracking behavior in silicon single crystal wafer
文献类型：期刊论文
| 作者 | J. Tan ; S. X. Li ; Y. Wan ; F. Li ; K. Lu |
| 刊名 | Materials Science and Engineering B-Solid State Materials for Advanced Technology
 |
| 出版日期 | 2003 |
| 卷号 | 103期号:1页码:49-56 |
| 关键词 | brittle-ductile-transition three-point bending silicon crack cross-slip zone to-ductile transition fatigue model |
| ISSN号 | 0921-5107 |
| 中文摘要 | Crystallographic cracking behavior was studied on three-point-bending specimens of silicon single-crystal wafer having (1(1) over bar 0) [11(2) over bar] -oriented precrack. Crystallographic cracking occurred on alternating {111} planes after traversing about 500 mum from crack front at the brittle-ductile-transition temperature, and the main crack was almost parallel to the loading axis. The preferentially activated slip systems ahead of the crack tip resulted in the characteristic fracture in the specimens. The experimental results could be well explained by calculating the shear stress on all possible tetrahedral slip planes around the crack tip. (C) 2003 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36026]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | J. Tan,S. X. Li,Y. Wan,et al. Crystallographic cracking behavior in silicon single crystal wafer[J]. Materials Science and Engineering B-Solid State Materials for Advanced Technology,2003,103(1):49-56. |
| APA | J. Tan,S. X. Li,Y. Wan,F. Li,&K. Lu.(2003).Crystallographic cracking behavior in silicon single crystal wafer.Materials Science and Engineering B-Solid State Materials for Advanced Technology,103(1),49-56. |
| MLA | J. Tan,et al."Crystallographic cracking behavior in silicon single crystal wafer".Materials Science and Engineering B-Solid State Materials for Advanced Technology 103.1(2003):49-56. |
入库方式： OAI收割
来源：金属研究所
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