中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A new approach for preparing effective inhibition film on copper based on self-assembled process

文献类型:期刊论文

作者C. T. Wang ; S. H. Chen
刊名Chinese Chemical Letters
出版日期2003
卷号14期号:3页码:308-311
关键词self-assembly phenylthiourea (PT) 1-dodecanethiol (DT) AC voltage protection alkanethiols monolayer corrosion
ISSN号1001-8417
中文摘要A new method for preparing effective inhibition film on copper has been developed. Phenylthiourea (PT) was first absorbed to copper surface to form a monolayer. 1-Dodecanethiol (DT) was then assembled on the surface for modification. Finally, AC voltage was loaded on copper covered the mixed film to improve it further. After these processes, an effective inhibition film was gained because of its high charge transfer resistance and low corrosion current density shown in electrochemical impedance spectra and polarization. The inhibition efficiency was more than 97%.
原文出处://WOS:000182281900029
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/36038]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
C. T. Wang,S. H. Chen. A new approach for preparing effective inhibition film on copper based on self-assembled process[J]. Chinese Chemical Letters,2003,14(3):308-311.
APA C. T. Wang,&S. H. Chen.(2003).A new approach for preparing effective inhibition film on copper based on self-assembled process.Chinese Chemical Letters,14(3),308-311.
MLA C. T. Wang,et al."A new approach for preparing effective inhibition film on copper based on self-assembled process".Chinese Chemical Letters 14.3(2003):308-311.

入库方式: OAI收割

来源:金属研究所

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