中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Tight-bindihg molecular-dynamics study of melting behaviour of small silicon clusters

文献类型:期刊论文

作者J. Wang ; S. Q. Wang
刊名Acta Physica Sinica
出版日期2003
卷号52期号:11页码:2854-2858
关键词tight-binding silicon clusters latent heat of fusion si clusters nanoparticles simulations
ISSN号1000-3290
中文摘要The Tight-binding molecular-dynamics (TBMD) has been used, to study the melting behaviour of small silicon clusters Si-n (n = 5-10). We report the calculated results of the latent heat of fusion Deltamu(ls) and the melting temperature T-m as a function of cluster size. Deltamu(ls) and Tm exhibit a strong dependence on cluster size. The melting mechanisms of silicon clusters are distinguished from metal clusters. The melting of metal clusters can be described as a transition from a low-energy solid-like structure at low temperatures to a higher-energy liquid-like structure at high temperatures. At the transition temperature, metal clusters undergo a dynamics coexistence of the two states, while the silicon clusters undergo an intermediate state which is neither liquid-like structure nor solid-like structure. The melting points obtained by using different calculation methods and definitions also have been compared in this work.
原文出处://WOS:000186520100035
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/36046]  
专题金属研究所_中国科学院金属研究所
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J. Wang,S. Q. Wang. Tight-bindihg molecular-dynamics study of melting behaviour of small silicon clusters[J]. Acta Physica Sinica,2003,52(11):2854-2858.
APA J. Wang,&S. Q. Wang.(2003).Tight-bindihg molecular-dynamics study of melting behaviour of small silicon clusters.Acta Physica Sinica,52(11),2854-2858.
MLA J. Wang,et al."Tight-bindihg molecular-dynamics study of melting behaviour of small silicon clusters".Acta Physica Sinica 52.11(2003):2854-2858.

入库方式: OAI收割

来源:金属研究所

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