Effects of Si ion implantation and post-annealing on yellow luminescence from GaN
文献类型：期刊论文
| 作者 | L. Dai ; J. C. Zhang ; Y. Chen ; G. Z. Ran ; G. G. Qin |
| 刊名 | Physica B-Condensed Matter
 |
| 出版日期 | 2002 |
| 卷号 | 322期号:1-2页码:51-56 |
| 关键词 | photoluminescence yellow luminescence ion implantation GaN detected magnetic-resonance vapor-phase epitaxy laser-diodes undoped gan photoluminescence vacancies layers origin |
| ISSN号 | 0921-4526 |
| 中文摘要 | We have studied the effects of Si ion implantation and post-annealing on yellow luminescence (YL) from GaN. Two types of GaN samples grown by the metal-organic chemical vapor deposition method and labeled as GaN1 and GaN2 were studied. The PL spectrum of the as-grown GaN1 sample was dominated by a strong YL and that of the as-grown GaN2 sample was almost free from YL. After Si ion implantation with doses of both 1.3 x 10(13) and 1.0 x 10(16)cm(-2), the intensity ratios of YL to near band edge (NBE) emission (I-Y/I-NBE) for the GaN1 samples decreased markedly compared with those of the corresponding unimplanted ones both before and after post-annealing at temperatures up to 950degreesC. However, for the Si-ion-implanted GaN2 sample with a dose of 1.3 x 10(13)cm(-2), I-Y/I-NBE increased compared with that of the as-grown one both before and after post-annealing. Besides, the I-Y/I-NBE for Si-ion-implanted GaN1 with a dose of 1.3 x 10(13) cm(-2) increased monotonically with annealing temperature. Our results show that only the Si ion implantation being accompanied with high-temperature post-annealing could produce YL. The possible reasons for the marked reduction in I-Y/I-NBE for the GaN1 sample after Si-ion-implantation have been discussed. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36255]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | L. Dai,J. C. Zhang,Y. Chen,et al. Effects of Si ion implantation and post-annealing on yellow luminescence from GaN[J]. Physica B-Condensed Matter,2002,322(1-2):51-56. |
| APA | L. Dai,J. C. Zhang,Y. Chen,G. Z. Ran,&G. G. Qin.(2002).Effects of Si ion implantation and post-annealing on yellow luminescence from GaN.Physica B-Condensed Matter,322(1-2),51-56. |
| MLA | L. Dai,et al."Effects of Si ion implantation and post-annealing on yellow luminescence from GaN".Physica B-Condensed Matter 322.1-2(2002):51-56. |
入库方式： OAI收割
来源：金属研究所
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