中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effects of germanium on the electronic transport mechanism in Co-20(Cu1-xGex)(80) nanogranular ribbons

文献类型:期刊论文

作者J. He ; Z. D. Zhang ; J. P. Liu ; D. J. Sellmyer
刊名Journal of Materials Research
出版日期2002
卷号17期号:12页码:3050-3055
关键词cu granular ribbons giant magnetoresistance films ni superlattices systems gmr
ISSN号0884-2914
中文摘要The dependency of giant magnetoresistance (GMR) on the nonmagnetic matrix in nanogranular Co-20(Cu1-xGex)(80) ribbons was studied. When the matrix Cu is substituted with semiconductor Ge, the magnetoresistance transitioned from negative to positive at low temperatures. The positive GMR effect is closely related to the quantity of CO/Co3Ge2/Co junctionlike configurations. This result provides evidence for the competition between two types of electronic transport mechanisms in the magnetic granular ribbons: (i) electronic spin-dependent scattering, inducing a negative magnetoresistance and (ii) Coulomb blockade of the electronic tunneling, inducing a positive magnetoresistance.
原文出处://WOS:000179614600012
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/36284]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
J. He,Z. D. Zhang,J. P. Liu,et al. Effects of germanium on the electronic transport mechanism in Co-20(Cu1-xGex)(80) nanogranular ribbons[J]. Journal of Materials Research,2002,17(12):3050-3055.
APA J. He,Z. D. Zhang,J. P. Liu,&D. J. Sellmyer.(2002).Effects of germanium on the electronic transport mechanism in Co-20(Cu1-xGex)(80) nanogranular ribbons.Journal of Materials Research,17(12),3050-3055.
MLA J. He,et al."Effects of germanium on the electronic transport mechanism in Co-20(Cu1-xGex)(80) nanogranular ribbons".Journal of Materials Research 17.12(2002):3050-3055.

入库方式: OAI收割

来源:金属研究所

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