Indentation induced amorphization in gallium arsenide
文献类型：期刊论文
| 作者 | Z. C. Li ; L. Liu ; X. Wu ; L. L. He ; Y. B. Xu |
| 刊名 | Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing
 |
| 出版日期 | 2002 |
| 卷号 | 337期号:1-2页码:21-24 |
| 关键词 | indentation amorphization gallium arsenide phase-transition high-pressure silicon hardness microindentation crystals |
| ISSN号 | 0921-5093 |
| 中文摘要 | Vickers indentations were carried out on the surface of GaAs single crystal with the load of 0.049 N and were observed using high-resolution electron microscopy in the present experiment. The experimental results reveal that many defects such as dislocation, microtwin and stacking-fault occurred and amorphization took place beneath the indentation. High-pressure induced amorphization and shear deformation induced amorphization were proposed for the transformation from crystalline to amorphous structure. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36326]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Z. C. Li,L. Liu,X. Wu,et al. Indentation induced amorphization in gallium arsenide[J]. Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing,2002,337(1-2):21-24. |
| APA | Z. C. Li,L. Liu,X. Wu,L. L. He,&Y. B. Xu.(2002).Indentation induced amorphization in gallium arsenide.Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing,337(1-2),21-24. |
| MLA | Z. C. Li,et al."Indentation induced amorphization in gallium arsenide".Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing 337.1-2(2002):21-24. |
入库方式： OAI收割
来源：金属研究所
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