TEM observation of the phase transition in indented GaAs
文献类型：期刊论文
| 作者 | Z. C. Li ; L. Liu ; X. Wu ; L. L. He ; Y. B. Xu |
| 刊名 | Materials Letters
 |
| 出版日期 | 2002 |
| 卷号 | 55期号:3页码:200-204 |
| 关键词 | GaAs single crystal Vickers indentation phase transition high-pressure silicon indentation hardness microindentation crystals |
| ISSN号 | 0167-577X |
| 中文摘要 | Indentations carried out with the loads of 0.0049, 0.049 and 0.098 N, respectively, on the surface of GaAs single crystal have been observed using transmission electron microscopy (TEM). The results show that plastic deformation took place in all the samples and phase transformation was induced by indentation. The microcrystal occurred beneath the 0.0049-N load indentation and the amorphous structure was formed under the 0.049-N load indentation. No obvious phase transformation was found beneath the 0.098-N load indentation. The possible mechanisms for the transformation from crystalline to the amorphous and microcrystalline structure were discussed. (C) 2002 Published by Elsevier Science B.V. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36327]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Z. C. Li,L. Liu,X. Wu,et al. TEM observation of the phase transition in indented GaAs[J]. Materials Letters,2002,55(3):200-204. |
| APA | Z. C. Li,L. Liu,X. Wu,L. L. He,&Y. B. Xu.(2002).TEM observation of the phase transition in indented GaAs.Materials Letters,55(3),200-204. |
| MLA | Z. C. Li,et al."TEM observation of the phase transition in indented GaAs".Materials Letters 55.3(2002):200-204. |
入库方式： OAI收割
来源：金属研究所
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