The VCNR properties of nano-structured ceria thin films
文献类型：期刊论文
| 作者 | Z. L. Liu ; H. M. Yue ; Y. Wang ; K. L. Yao ; Q. Liu |
| 刊名 | Solid State Communications
 |
| 出版日期 | 2002 |
| 卷号 | 124期号:5-6页码:171-176 |
| 关键词 | nano-structured ceria thin films differential negative resistance properties sol-gel method current-voltage characteristics electroformed mim structures gel resistances devices |
| ISSN号 | 0038-1098 |
| 中文摘要 | Nano-structured ceria thin films were prepared by using the sol-gel dip-coating method. The films were heated at various temperatures. A constant voltage source is used to measure current-voltage (I-V) properties. We found voltage-controlled differential negative resistance (VCNR) properties in these ceria thin films. The VCNR properties exhibit two distinct characteristics. One is that the VCNR behavior is very obvious for the negative I-V characteristics and is not symmetric about the voltage. The other is that in the negative I-V characteristics region, the current increases sharply at low voltage until it reaches a maximum, and subsequently the current decreases to a minimum but not zero, and then the current continues to rise linearly with increasing of voltage. The conduction mechanism of the above phenomena is discussed and the influence of operating temperature, dopant concentration and heating temperature on the VCNR properties of ceria thin films is analyzed. (C) 2002 Elsevier Science Ltd. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36357]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Z. L. Liu,H. M. Yue,Y. Wang,et al. The VCNR properties of nano-structured ceria thin films[J]. Solid State Communications,2002,124(5-6):171-176. |
| APA | Z. L. Liu,H. M. Yue,Y. Wang,K. L. Yao,&Q. Liu.(2002).The VCNR properties of nano-structured ceria thin films.Solid State Communications,124(5-6),171-176. |
| MLA | Z. L. Liu,et al."The VCNR properties of nano-structured ceria thin films".Solid State Communications 124.5-6(2002):171-176. |
入库方式： OAI收割
来源：金属研究所
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