Study on the annealing effects of proton-implanted rutile
文献类型：期刊论文
| 作者 | T. C. Lu ; L. B. Lin ; S. G. Chen ; S. Y. Wu ; G. Cheng ; X. C. Xu |
| 刊名 | Surface & Coatings Technology
 |
| 出版日期 | 2002 |
| 卷号 | 158页码:426-430 |
| 关键词 | titanium oxide ion implantation defects positron spectroscopy photon absorption spectroscopy tio2 single-crystals lattice disorder ion recovery defects |
| ISSN号 | 0257-8972 |
| 中文摘要 | The annealing effects of proton-implanted rutile single crystal have been investigated with positron annihilation technology (PAT). The stoichiometric and non-stoichiometric rutile crystals were implanted by protons, with an energy of 4.9 MeV and a fluence of 1 X 10(18) m(-2). Implanted samples were annealed from room temperature to 500 degreesC with steps of 50 degreesC. Positron annihilation lifetime spectra were used to study the dynamic variation of defects. Corresponding optical absorption spectra were also measured for comparison. The results show that, implanted H+ ions induce defects being different in stoichiometric and nonstoichiometric samples. The defects aggregate to bigger, complex clusters during annealing, then decompose into small, simple defects again. The aggregating temperature of different defects is different. For non-stoichiometric rutile, the results of PAT measurements are satisfactorily consistent with those of optical absorption. The mechanism of annealing effects is also discussed. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36361]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | T. C. Lu,L. B. Lin,S. G. Chen,et al. Study on the annealing effects of proton-implanted rutile[J]. Surface & Coatings Technology,2002,158:426-430. |
| APA | T. C. Lu,L. B. Lin,S. G. Chen,S. Y. Wu,G. Cheng,&X. C. Xu.(2002).Study on the annealing effects of proton-implanted rutile.Surface & Coatings Technology,158,426-430. |
| MLA | T. C. Lu,et al."Study on the annealing effects of proton-implanted rutile".Surface & Coatings Technology 158(2002):426-430. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。