Microstructure of si cones prepared by Ar+-sputtering Si/Mo target
文献类型：期刊论文
| 作者 | X. L. Ma ; N. G. Shang ; C. S. Lee ; S. T. Lee |
| 刊名 | Journal of Materials Science & Technology
 |
| 出版日期 | 2002 |
| 卷号 | 18期号:2页码:173-175 |
| 关键词 | Si cones ordered structure Mo silicide copper seed cones resolution electron-microscopy surface growth |
| ISSN号 | 1005-0302 |
| 中文摘要 | By Ar+ sputtering onto Si wafers which were surrounded by Mo plates, uniform cones over a large area on the Si surface were formed. Scanning electron microscopic study showed that the cones were formed on the entire surface of the Si wafer. The dimensions of the uniform cones were one micrometer in diameter and 5similar to6 micrometer's high. They were further characterized by means of cross-sectional transmission electron microscopy, with the technique of micro-diffractions. It was found that the cone contained a pure Si regime and a Mo-rich regime. In the binary Mo-Si zone, we identified three distinct areas vertically: (1) domains of Mo-induced Si ordered structures, (2) a small volume of a new Mo3Si2 structural variant, intergrown with the Si ordered structure, and (3) a small amount of pure Mo nanoparticles covering the surface of the cones. The formation of the large and uniform cones may provide a new surface configuration for potential applications in surface science and technology. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36373]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. L. Ma,N. G. Shang,C. S. Lee,et al. Microstructure of si cones prepared by Ar+-sputtering Si/Mo target[J]. Journal of Materials Science & Technology,2002,18(2):173-175. |
| APA | X. L. Ma,N. G. Shang,C. S. Lee,&S. T. Lee.(2002).Microstructure of si cones prepared by Ar+-sputtering Si/Mo target.Journal of Materials Science & Technology,18(2),173-175. |
| MLA | X. L. Ma,et al."Microstructure of si cones prepared by Ar+-sputtering Si/Mo target".Journal of Materials Science & Technology 18.2(2002):173-175. |
入库方式： OAI收割
来源：金属研究所
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