Formation of Al-doped ZnO films by de magnetron reactive sputtering
文献类型：期刊论文
| 作者 | M. Chen ; Z. L. Pei ; C. Sun ; L. S. Wen ; X. Wang |
| 刊名 | Materials Letters
 |
| 出版日期 | 2001 |
| 卷号 | 48期号:3-4页码:194-198 |
| 关键词 | Al-doped ZnO XPS Al-enrichment oxide thin-films optical-properties electrical-properties rf dc transparent deposition |
| ISSN号 | 0167-577X |
| 中文摘要 | Highly preferred (002) orientation transparent conductive Al-doped ZnO (ZAO) films were successfully prepared by de magnetron reactive sputtering from a Zn target mixed with Al of 2.0 wt.%. The film has a resistivity of 4.80 X 10(-4) n cm and a visible transmittance of as high as 90%. XPS analysis indicates Al-enrichment on the film surface. The asymmetry of Al 2p(3/2) XPS peak is resolved into two components: one centering at 72.14 eV attributed to metallic Al and the other having a binding energy of 74.17 eV due to oxidized Al. (C) 2001 Elsevier Science B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36606]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | M. Chen,Z. L. Pei,C. Sun,et al. Formation of Al-doped ZnO films by de magnetron reactive sputtering[J]. Materials Letters,2001,48(3-4):194-198. |
| APA | M. Chen,Z. L. Pei,C. Sun,L. S. Wen,&X. Wang.(2001).Formation of Al-doped ZnO films by de magnetron reactive sputtering.Materials Letters,48(3-4),194-198. |
| MLA | M. Chen,et al."Formation of Al-doped ZnO films by de magnetron reactive sputtering".Materials Letters 48.3-4(2001):194-198. |
入库方式： OAI收割
来源：金属研究所
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