Study on ZnO : Al (ZAO) films by DC reaction magnetron sputtering
文献类型：期刊论文
| 作者 | Z. L. Pei ; C. Sun ; M. H. Tan ; D. H. Guan ; J. Q. Xiao ; R. F. Huang ; L. H. Wen |
| 刊名 | Progress in Natural Science
 |
| 出版日期 | 2001 |
| 卷号 | 11期号:6页码:439-446 |
| 关键词 | ZnO : Al films scattering mechanism photoelectric properties oxide thin-films conduction mechanism transparent sensors |
| ISSN号 | 1002-0071 |
| 中文摘要 | The high quality ZnO:Al films were successfully produced by DC reaction magnetron sputtering technology. The Al-doping effect on electrical and optical properties and its scattering mechanism are discussed in detail. The analyses of X-ray diffractometer (XRD), X-ray photoelectron spectroscopy(XPS) and high resolution Auger electron spectroscopy (AES) show that Al2O3 could be effectively removed by controlling oxygen now and Al-doping concentration during deposition of ZnO:AI films. Zn, Al and oxygen elements are well distributed through the films. For highly degenerated ZnO:Al semi-conductive thin films, the theoretical and experimental results reveal that the ionized impurity scattering dominates the Hall mobility in the films in the low-temperature range, while the lattice vibration scattering becomes a major scattering mechanism in the high-temperature range. The grain boundary scattering only plays a major role in the ZAO films with small grain size las compared to the electron mean free path). The photoelectric properties of ZAO films show that it has low resistivity ( similar to 5 x 10(-4) Omega cm), and the transmittance in visible range and the reflectance in IR region are above 80% and 60%, respectively. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36775]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Z. L. Pei,C. Sun,M. H. Tan,et al. Study on ZnO : Al (ZAO) films by DC reaction magnetron sputtering[J]. Progress in Natural Science,2001,11(6):439-446. |
| APA | Z. L. Pei.,C. Sun.,M. H. Tan.,D. H. Guan.,J. Q. Xiao.,...&L. H. Wen.(2001).Study on ZnO : Al (ZAO) films by DC reaction magnetron sputtering.Progress in Natural Science,11(6),439-446. |
| MLA | Z. L. Pei,et al."Study on ZnO : Al (ZAO) films by DC reaction magnetron sputtering".Progress in Natural Science 11.6(2001):439-446. |
入库方式： OAI收割
来源：金属研究所
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