4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures
文献类型：期刊论文
| 作者 | G. Z. Ran ; W. C. Qin ; Z. C. Ma ; W. H. Zong ; G. G. Qin |
| 刊名 | Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
 |
| 出版日期 | 2001 |
| 卷号 | 173期号:3页码:299-303 |
| 关键词 | porous silicon visible electroluminescence quantum efficiency si structure p-si oxide photoluminescence films |
| ISSN号 | 0168-583X |
| 中文摘要 | The effects of 3 MeV electron irradiation on electroluminescence (EL) from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures are reported. The SiO2 and Si-rich SiO2 films were deposited on p-Si wafers using the magnetron sputtering technique and then processed by rapid thermal annealing (RTA) at a series of temperatures. The Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures were irradiated by electrons with an energy of 4 Mev and a dose rate of 8.5 x 10(12) cm(-2) s(-1) EL intensities of the two structures as functions of the RTA temperature and electron irradiation time have been studied. For the Au/SiO2/p-Si structure with SiO2/p-Si annealed at 900 degreesC, the EL intensity increased to a maximum in electron irradiation for 20 s, which is larger than that before irradiation by a factor of 3. These experimental results have been discussed. (C) 2001 Elsevier Science B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36785]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. Z. Ran,W. C. Qin,Z. C. Ma,et al. 4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures[J]. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,2001,173(3):299-303. |
| APA | G. Z. Ran,W. C. Qin,Z. C. Ma,W. H. Zong,&G. G. Qin.(2001).4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures.Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,173(3),299-303. |
| MLA | G. Z. Ran,et al."4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures".Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 173.3(2001):299-303. |
入库方式： OAI收割
来源：金属研究所
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