中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Accurate electrical resistance measurement of the crystallization kinetics of amorphous alloys

文献类型:期刊论文

作者Y. P. Wang ; K. Lu
刊名Science in China Series E-Technological Sciences
出版日期2001
卷号44期号:1页码:33-41
关键词electrical resistance amorphous alloys crystallization nucleation growth metallic glasses activation-energies growth
ISSN号1006-9321
中文摘要An accurate four-line ac electrical resistance measurement (ERM) apparatus was developed. By using the ERM the crystallization kinetics of amorphous NI80P20, FeZr2, Fe86B14 alloys were investigated. The experimental results show that the ERM can identify the early stage of crystallization in amorphous alloys. The ERM detects a crystallization temperature range obviously wider than the DSC does, indicating that the ERM is more sensitive to the structure evolution in crystallization. For the eutectic or polymorphic crystallization, three distinct processes can be identified from the measured resistance variation: (i) crystal nucleation, (ii) subsequent growth of crystal nuclei, and (iii) coarsening of the crystallites. In the early stage of the primary crystallization, the ERM results reflect the nucleation information as well.
原文出处://WOS:000167195600005
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/36835]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Y. P. Wang,K. Lu. Accurate electrical resistance measurement of the crystallization kinetics of amorphous alloys[J]. Science in China Series E-Technological Sciences,2001,44(1):33-41.
APA Y. P. Wang,&K. Lu.(2001).Accurate electrical resistance measurement of the crystallization kinetics of amorphous alloys.Science in China Series E-Technological Sciences,44(1),33-41.
MLA Y. P. Wang,et al."Accurate electrical resistance measurement of the crystallization kinetics of amorphous alloys".Science in China Series E-Technological Sciences 44.1(2001):33-41.

入库方式: OAI收割

来源:金属研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。