Theoretical studies of the g-shift for Cr4+ ions in GaN crystal from crystal-field and charge-transfer mechanisms
文献类型：期刊论文
| 作者 | W. C. Zeng ; S. Y. Wu ; Jian Zi |
| 刊名 | Journal of Physics-Condensed Matter
 |
| 出版日期 | 2001 |
| 卷号 | 13期号:33页码:7459-7464 |
| 关键词 | transition-metal impurities paramagnetic-resonance epitaxial layers identification luminescence nitride defects gaas |
| ISSN号 | 0953-8984 |
| 中文摘要 | The assignment of the 1.193 eV zero-phonon line of the 3d(2) ion in GaN crystal to the internal luminescence of Cr4+ on the Ga3+ site is analysed. Based on this assignment, the g-shift Ag (=g - g(s)) of the groundstate of this luminescence is calculated by considering not only the conventional contribution due to the crystal-field mechanism, but also the contribution due to charge-transfer mechanism. The calculated result shows good agreement with the observed value, suggesting that the assignment is reasonable. The calculated Ag due to the charge-transfer mechanism is opposite in sign and 62% in magnitude, compared with that due to the crystal-field mechanism, and so it cannot be neglected. It appears that for the 3d(2) (or 3d(n)) ion with a high valence state in crystals (particularly, in the case of the ligand having small optical electronegativity), the reasonable explanation of the g-shift should consider the contributions from both the crystal-field and charge-transfer mechanisms. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36895]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | W. C. Zeng,S. Y. Wu,Jian Zi. Theoretical studies of the g-shift for Cr4+ ions in GaN crystal from crystal-field and charge-transfer mechanisms[J]. Journal of Physics-Condensed Matter,2001,13(33):7459-7464. |
| APA | W. C. Zeng,S. Y. Wu,&Jian Zi.(2001).Theoretical studies of the g-shift for Cr4+ ions in GaN crystal from crystal-field and charge-transfer mechanisms.Journal of Physics-Condensed Matter,13(33),7459-7464. |
| MLA | W. C. Zeng,et al."Theoretical studies of the g-shift for Cr4+ ions in GaN crystal from crystal-field and charge-transfer mechanisms".Journal of Physics-Condensed Matter 13.33(2001):7459-7464. |
入库方式： OAI收割
来源：金属研究所
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