The structural, dielectric and ferroelectric properties of Bi(3.5)La(0.5)Ti(3)O(12) thin films prepared by sol-gel process
文献类型：期刊论文
| 作者 | J. G. Zhu ; C. Yu ; D. Q. Xiao ; L. Shen ; X. W. Yuan ; J. L. Zhu ; X. Yue |
| 刊名 | Ferroelectrics
 |
| 出版日期 | 2001 |
| 卷号 | 260期号:1-4页码:499-504 |
| 关键词 | bismuth titanate lanthanum doped sol-gel memories srbi2ta2o9 |
| ISSN号 | 0015-0193 |
| 中文摘要 | Lanthanum doped bismuth titanate (Bi(3.5)La(0.5)Ti(3)O(12), BLT-5) thin films were prepared by sol-gel method. Polycrystalline BLT-5 thin films could be obtained at annealing temperatures of 600similar to650 degreesC. The typical coercive electric field (E) and remnant polarization (P,) for the BLT-5 thin film annealed at 650degreesC were E(C)=67 kV/cm, P(r) =11.2 mu C/cm(2), respectively. BLT-5 thin film shows good fatigue-free property. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36965]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | J. G. Zhu,C. Yu,D. Q. Xiao,et al. The structural, dielectric and ferroelectric properties of Bi(3.5)La(0.5)Ti(3)O(12) thin films prepared by sol-gel process[J]. Ferroelectrics,2001,260(1-4):499-504. |
| APA | J. G. Zhu.,C. Yu.,D. Q. Xiao.,L. Shen.,X. W. Yuan.,...&X. Yue.(2001).The structural, dielectric and ferroelectric properties of Bi(3.5)La(0.5)Ti(3)O(12) thin films prepared by sol-gel process.Ferroelectrics,260(1-4),499-504. |
| MLA | J. G. Zhu,et al."The structural, dielectric and ferroelectric properties of Bi(3.5)La(0.5)Ti(3)O(12) thin films prepared by sol-gel process".Ferroelectrics 260.1-4(2001):499-504. |
入库方式： OAI收割
来源：金属研究所
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