中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Mechanism of the dynamic thermal expansion of bismuth-based high-T-c superconductors

文献类型:期刊论文

作者J. Chen ; B. Zhou
刊名International Journal of Thermophysics
出版日期2000
卷号21期号:2页码:593-600
关键词dynamic process of thermal expansion energy absorption high-T-c superconductors
ISSN号0195-928X
中文摘要The dynamic process of thermal expansion (DPTE) of Bi-based high-T-c ( HTC) superconductor samples (Bi2Sr2Ca2Cu3O10, T-c = 105 K) is studied theoretically. The abnormal expansion behavior in the superconducting and normal stairs are of relevance to the energy absorption and pairing mechanisms.
原文出处://WOS:000086818700029
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/36990]  
专题金属研究所_中国科学院金属研究所
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J. Chen,B. Zhou. Mechanism of the dynamic thermal expansion of bismuth-based high-T-c superconductors[J]. International Journal of Thermophysics,2000,21(2):593-600.
APA J. Chen,&B. Zhou.(2000).Mechanism of the dynamic thermal expansion of bismuth-based high-T-c superconductors.International Journal of Thermophysics,21(2),593-600.
MLA J. Chen,et al."Mechanism of the dynamic thermal expansion of bismuth-based high-T-c superconductors".International Journal of Thermophysics 21.2(2000):593-600.

入库方式: OAI收割

来源:金属研究所

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