Surface characterization of transparent conductive oxide Al-doped ZnO films
文献类型:期刊论文
作者 | M. Chen ; Z. L. Pei ; C. Sun ; L. S. Wen ; X. Wang |
刊名 | Journal of Crystal Growth |
出版日期 | 2000 |
卷号 | 220期号:3页码:254-262 |
ISSN号 | 0022-0248 |
关键词 | Al-doped ZnO (ZAO) spatial distribution XPS Al-enrichment thin-films optical-properties electrical-properties rf dc deposition |
中文摘要 | High preferred (002) orientation Al-doped ZnO (ZAO) films were prepared by DC magnetron reactive sputtering from a Zn target mixed with Al of 2.0wt%. The dependence of spatial distributions of resistivity on substrate temperature indicates that the spatial distribution of resistivity across substrate placed parallel to the target was improved by increasing substrate temperature. XPS analysis indicates Al-enrichment on the film surface. (C) 2000 Elsevier Science B.V. All rights reserved. |
原文出处 | |
公开日期 | 2012-04-14 |
源URL | [http://ir.imr.ac.cn/handle/321006/36993] |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | M. Chen,Z. L. Pei,C. Sun,et al. Surface characterization of transparent conductive oxide Al-doped ZnO films[J]. Journal of Crystal Growth,2000,220(3):254-262. |
APA | M. Chen,Z. L. Pei,C. Sun,L. S. Wen,&X. Wang.(2000).Surface characterization of transparent conductive oxide Al-doped ZnO films.Journal of Crystal Growth,220(3),254-262. |
MLA | M. Chen,et al."Surface characterization of transparent conductive oxide Al-doped ZnO films".Journal of Crystal Growth 220.3(2000):254-262. |
入库方式: OAI收割
来源:金属研究所
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