Intrinsic limit of electrical properties of transparent conductive oxide films
文献类型：期刊论文
| 作者 | M. Chen ; Z. L. Pei ; X. Wang ; Y. H. Yu ; X. H. Liu ; C. Sun ; L. S. Wen |
| 刊名 | Journal of Physics D-Applied Physics
 |
| 出版日期 | 2000 |
| 卷号 | 33期号:20页码:2538-2548 |
| 关键词 | doped in2o3 films dominant scattering mechanisms amorphous indium oxide optical-properties thin-films zno films structural-properties reactive evaporation physical-properties spray-pyrolysis |
| ISSN号 | 0022-3727 |
| 中文摘要 | Contributions of acoustical deformation scattering, ion impurity scattering and grain boundary potential scattering to the conductivity of TCO films have been calculated in order to deduce the intrinsic limit of conductivity of TCO films regardless of precise details of the preparation procedure. The results indicate that the effective mass of charge carriers has a strong dependence on carrier concentration. Based on the effective mass correction, as well as the carrier concentration ionized impurity centre correction, scattering due to ion impurity has been developed to explain the upper limit of mobility or the lower limit of resistivity of TCO films. Two empirical expressions are introduced to depict the dependence of the upper limit of mobility and the lower limit of resistivity of TCO films on carrier concentration. The dependence of transparency on carrier concentration is also discussed. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/36994]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | M. Chen,Z. L. Pei,X. Wang,et al. Intrinsic limit of electrical properties of transparent conductive oxide films[J]. Journal of Physics D-Applied Physics,2000,33(20):2538-2548. |
| APA | M. Chen.,Z. L. Pei.,X. Wang.,Y. H. Yu.,X. H. Liu.,...&L. S. Wen.(2000).Intrinsic limit of electrical properties of transparent conductive oxide films.Journal of Physics D-Applied Physics,33(20),2538-2548. |
| MLA | M. Chen,et al."Intrinsic limit of electrical properties of transparent conductive oxide films".Journal of Physics D-Applied Physics 33.20(2000):2538-2548. |
入库方式： OAI收割
来源：金属研究所
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