Room temperature H2S sensing properties and mechanism of CeO2-SnO2 sol-gel thin films
文献类型：期刊论文
| 作者 | G. J. Fang ; Z. L. Liu ; C. Q. Liu ; K. L. Yao |
| 刊名 | Sensors and Actuators B-Chemical
 |
| 出版日期 | 2000 |
| 卷号 | 66期号:1-3页码:46-48 |
| 关键词 | gas sensing properties CeO2-SnO2 thin film room temperature sol-gel technique hydrogen-sulfide sensor |
| ISSN号 | 0925-4005 |
| 中文摘要 | Using non-alkoxide SnCl2 . 2H(2)O, Ce(NH4)(2)(NO3)(6) as precursors, room temperature H2S gas sensitive CeO2-SnO2 thin films have been obtained. In this paper, the synthesis process of CeO2-SnO2 thin films has been introduced; the gas sensing properties of the CeO2-SnO2 thin films were investigated and compared with those of SnO2 and ZrO2-SnO2 thin films. The experiments illustrate that CeO2-SnO2 thin film has quite a quick response and recovery behavior, high selectivity, and has better sensitivity than that of ZrO2-SnO2 thin film toward low concentration of H2S at room temperature. The sensing mechanism of CeO2-SnO2 thin films toward H2S at room temperature has also been discussed in this paper. (C) 2000 Elsevier Science S.A. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37026]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. J. Fang,Z. L. Liu,C. Q. Liu,et al. Room temperature H2S sensing properties and mechanism of CeO2-SnO2 sol-gel thin films[J]. Sensors and Actuators B-Chemical,2000,66(1-3):46-48. |
| APA | G. J. Fang,Z. L. Liu,C. Q. Liu,&K. L. Yao.(2000).Room temperature H2S sensing properties and mechanism of CeO2-SnO2 sol-gel thin films.Sensors and Actuators B-Chemical,66(1-3),46-48. |
| MLA | G. J. Fang,et al."Room temperature H2S sensing properties and mechanism of CeO2-SnO2 sol-gel thin films".Sensors and Actuators B-Chemical 66.1-3(2000):46-48. |
入库方式： OAI收割
来源：金属研究所
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