Multiple mechanism model for photoluminescence from oxidized porous Si
文献类型：期刊论文
| 作者 | G. G. Qin ; G. Qin |
| 刊名 | Physica Status Solidi a-Applied Research
 |
| 出版日期 | 2000 |
| 卷号 | 182期号:1页码:335-339 |
| 关键词 | silicon luminescence states layers oxygen dlts |
| ISSN号 | 0031-8965 |
| 中文摘要 | In order to explain experimental results for photoluminescence (PL) from porous silicon (PS), a novel multiple mechanism model is suggested. There are three types of competitive photoexcitation-photoemission processes in PS; and which of them dominates, is usually determined by the oxidation degree of the PS. For a PS sample free from oxidation, the process that both photoexcitation and photoemission of electron-hole pails occur within nanometer silicon particles (NSPs) is dominating. For most oxidized PS samples, the process with the photoexcitation occuring in NSPs, but photoemission occuring in luminescence centers in the SiOx layers surrounding the NSPs, dominates. When NSPs in oxidized PS samples have very small density or very small or large sizes, the process that both photoexcitation and photoemission occur in Si oxide layers is dominating. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37153]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. G. Qin,G. Qin. Multiple mechanism model for photoluminescence from oxidized porous Si[J]. Physica Status Solidi a-Applied Research,2000,182(1):335-339. |
| APA | G. G. Qin,&G. Qin.(2000).Multiple mechanism model for photoluminescence from oxidized porous Si.Physica Status Solidi a-Applied Research,182(1),335-339. |
| MLA | G. G. Qin,et al."Multiple mechanism model for photoluminescence from oxidized porous Si".Physica Status Solidi a-Applied Research 182.1(2000):335-339. |
入库方式： OAI收割
来源：金属研究所
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