A theoretical study on various models for the domain boundaries in epitaxial GaN films
文献类型：期刊论文
| 作者 | S. Q. Wang ; Y. M. Wang ; H. Q. Ye |
| 刊名 | Applied Physics a-Materials Science & Processing
 |
| 出版日期 | 2000 |
| 卷号 | 70期号:4页码:475-480 |
| 关键词 | molecular-beam epitaxy defect structure wurtzite gan mocvd aln |
| ISSN号 | 0947-8396 |
| 中文摘要 | Various domain boundaries that are found in epitaxial Wurtzite GaN films were studied by molecular dynamics simulation. The Ewald summation algorithm and Keating potential model are adopted to calculate the long-range Coulomb interaction and the short-range bonding force in the semiconductor system, respectively. The research results show that the domain formation energies of (1 (1) over bar 00) and (1 (1) over bar 20) boundaries are significantly different. The latter ones have general quite higher formation energies than the formers. The Like-atom (i.e, atoms of the same kind) bonding domain boundaries (LABDB) have higher formation energies than their counterparts of unlike-atom (i.e. atoms of different kinds) bonding domain boundaries (UABDB) in all GaN (1 (1) over bar 00) and (11 (2) over bar 0) interfaces. The UABDB structures are all stable while most of the LABDB are unstable. The advantage and the limitation of Keating potential model in Molecular Dynamics simulation for covalent crystal are discussed. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37196]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | S. Q. Wang,Y. M. Wang,H. Q. Ye. A theoretical study on various models for the domain boundaries in epitaxial GaN films[J]. Applied Physics a-Materials Science & Processing,2000,70(4):475-480. |
| APA | S. Q. Wang,Y. M. Wang,&H. Q. Ye.(2000).A theoretical study on various models for the domain boundaries in epitaxial GaN films.Applied Physics a-Materials Science & Processing,70(4),475-480. |
| MLA | S. Q. Wang,et al."A theoretical study on various models for the domain boundaries in epitaxial GaN films".Applied Physics a-Materials Science & Processing 70.4(2000):475-480. |
入库方式： OAI收割
来源：金属研究所
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