The deposition of oriented diamond film by hot-filament chemical vapor deposition with separate reactant gas
文献类型：期刊论文
| 作者 | G. C. Chen ; C. Sun ; R. F. Huang ; L. S. Wen ; D. Y. Jiang ; X. Z. Yao |
| 刊名 | Journal of Materials Research
 |
| 出版日期 | 1999 |
| 卷号 | 14期号:8页码:3196-3199 |
| 关键词 | growth morphology mechanism surfaces si(100) plasma c-13 cvd |
| ISSN号 | 0884-2914 |
| 中文摘要 | A (110)-oriented diamond film was deposited by hot filament chemical vapor deposition with H-2 and CH4 separately introduced into the reactive zone. The film with a degree of orientation I-(220)/I-(111) of more than 200% and deposition rate of 2-3 mu m/h was obtained for a deposition time of 17 h. The long deposition time enlarged the grain size and enhanced the degree of orientation, but too long a deposition time resulted in random growth. The temperature field was measured and also calculated using a simple model. Both results showed that a temperature field existed with varied gradients along the normal of substrate surface. The (110)-oriented diamond film was deposited in the zone with negative temperature gradient. The change in orientation occurring for long deposition times was ascribed to the change of temperature gradient. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37316]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. C. Chen,C. Sun,R. F. Huang,et al. The deposition of oriented diamond film by hot-filament chemical vapor deposition with separate reactant gas[J]. Journal of Materials Research,1999,14(8):3196-3199. |
| APA | G. C. Chen,C. Sun,R. F. Huang,L. S. Wen,D. Y. Jiang,&X. Z. Yao.(1999).The deposition of oriented diamond film by hot-filament chemical vapor deposition with separate reactant gas.Journal of Materials Research,14(8),3196-3199. |
| MLA | G. C. Chen,et al."The deposition of oriented diamond film by hot-filament chemical vapor deposition with separate reactant gas".Journal of Materials Research 14.8(1999):3196-3199. |
入库方式： OAI收割
来源：金属研究所
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