Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices
文献类型：期刊论文
| 作者 | C. L. Heng ; B. R. Zhang ; Y. P. Qiao ; Z. C. Ma ; W. H. Zong ; G. G. Qin |
| 刊名 | Physica B-Condensed Matter
 |
| 出版日期 | 1999 |
| 卷号 | 270期号:1-2页码:104-109 |
| 关键词 | SiO2 electroluminescence superlattice oxidized porous silicon optical-properties blue luminescence origin films |
| ISSN号 | 0921-4526 |
| 中文摘要 | Amorphous Si/SiO2 superlattices, with four periods, have been grown using the two-target alternation magnetron sputtering technique. The thicknesses of Si layers in all the superlattices are 1.0 nm, and those of SiO2 layers in six types of the superlattices are 1.0, 1.5, 2.0, 2.5, 3.0, and 3.5 nm. Electroluminescence (EL) from the Au/(Si/SiO2) superlattice/p-Si samples has been observed at a forward bias about 5 V or larger. The influences on the EL spectra from the thicknesses of SiO2 layers in the amorphous Si/SiO2 superlattices and from input electrical power are studied systematically. (C) 1999 Elsevier Science B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37367]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | C. L. Heng,B. R. Zhang,Y. P. Qiao,et al. Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices[J]. Physica B-Condensed Matter,1999,270(1-2):104-109. |
| APA | C. L. Heng,B. R. Zhang,Y. P. Qiao,Z. C. Ma,W. H. Zong,&G. G. Qin.(1999).Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices.Physica B-Condensed Matter,270(1-2),104-109. |
| MLA | C. L. Heng,et al."Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices".Physica B-Condensed Matter 270.1-2(1999):104-109. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。