中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Low-temperature synthesis and photoluminescence of AlN

文献类型:期刊论文

作者Y. C. Lan ; X. L. Chen ; Y. G. Cao ; Y. P. Xu ; L. D. Xun ; T. Xu ; J. K. Liang
刊名Journal of Crystal Growth
出版日期1999
卷号207期号:3页码:247-250
关键词wurtzite AlN synthesis PL spectrum band-gap nitride growth ain
ISSN号0022-0248
中文摘要High-quality aluminum nitride powder was obtained through the reaction of aluminum metal with ammonia at 450 degrees C in an autoclave. The synthesized powder was characterized by X-ray powder diffraction, high-resolution transmission electron microscopy (HRTEM) and photoluminescence spectrum. X-ray diffraction and HRTEM indicated that the powder consisted of wurtzite AIN with an average size of about 32 nm. Photoluminescence spectrum confirmed the existence of a blue luminescence band in AIN due to nitrogen vacancies. A possible low-temperature synthesis mechanism was discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
原文出处://WOS:000083841800011
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/37391]  
专题金属研究所_中国科学院金属研究所
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Y. C. Lan,X. L. Chen,Y. G. Cao,et al. Low-temperature synthesis and photoluminescence of AlN[J]. Journal of Crystal Growth,1999,207(3):247-250.
APA Y. C. Lan.,X. L. Chen.,Y. G. Cao.,Y. P. Xu.,L. D. Xun.,...&J. K. Liang.(1999).Low-temperature synthesis and photoluminescence of AlN.Journal of Crystal Growth,207(3),247-250.
MLA Y. C. Lan,et al."Low-temperature synthesis and photoluminescence of AlN".Journal of Crystal Growth 207.3(1999):247-250.

入库方式: OAI收割

来源:金属研究所

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