中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Thermal stress behavior of diffusion-bonded SiC/6061Al laminates during thermal cycling

文献类型:期刊论文

作者H. Li ; J. B. Li ; Z. G. Wang ; C. H. Jiang ; D. Z. Wang
刊名Journal of Materials Science & Technology
出版日期1999
卷号15期号:2页码:117-120
关键词residual-stress thin-films near-interface temperature curvature composite substrate formula layer
ISSN号1005-0302
中文摘要The thermal stress behavior of bonded SiC/6061AL laminates during thermal cycling and the stress relaxation at elevated temperature (205 degrees C) were investigated by means of X-ray diffraction. It was found that the elastic and elastoplastic deformation in the 6061Al layer took place during thermal cycling, and the same closed stress temperature loop was formed in the second cycling for the aged and low temperature treated specimen. Meanwhile, it was demonstrated that the compressive stress relaxed in 6061Al layer at 205 degrees C within the range of 0.5 similar to 16 h, and which was nearly unchanged with further prolongation of time.
原文出处://WOS:000079552000003
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/37400]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
H. Li,J. B. Li,Z. G. Wang,et al. Thermal stress behavior of diffusion-bonded SiC/6061Al laminates during thermal cycling[J]. Journal of Materials Science & Technology,1999,15(2):117-120.
APA H. Li,J. B. Li,Z. G. Wang,C. H. Jiang,&D. Z. Wang.(1999).Thermal stress behavior of diffusion-bonded SiC/6061Al laminates during thermal cycling.Journal of Materials Science & Technology,15(2),117-120.
MLA H. Li,et al."Thermal stress behavior of diffusion-bonded SiC/6061Al laminates during thermal cycling".Journal of Materials Science & Technology 15.2(1999):117-120.

入库方式: OAI收割

来源:金属研究所

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