Energy levels of the d*(8) electron and d*(2) hole system
文献类型:期刊论文
作者 | D. M. Lu ; T. H. Yeom |
刊名 | Physical Review B
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出版日期 | 1999 |
卷号 | 59期号:7页码:4881-4887 |
关键词 | zns-ni absorption vanadium impurities spectra ions |
ISSN号 | 0163-1829 |
中文摘要 | In the investigation of the optical and magnetic properties of the semiconductors containing transition-metal ions, the one-electron orbital cannot be treated with a pure d orbital because of a strong covalence. This paper presents the energy matrix of the d*(8) and d*(2) (d* means a modified d function) system, in which the covalence is described by two covalent factors. The differences between the matrix diagonal elements of the t(2)(m)e(n) term of the d*(8) system and the t(2)(6-m)e(4-n) term of the d*(2) system vary with m and n. The d(N) electron system can be explained with the d(10-N) hole system because the difference between the energy matrix of the d(N) and d(10-N) systems has a fixed value. However, this kind of simple relation does not exist for the d*(N) and d*(10-N) systems when the covalence is considered. A numerical calculation shows that the variation of the energy levels with the covalence for Ni2+ in the d*(8) electron system is larger than that in the d*(2) hole system. The calculated energy levels obtained from the d*(8) matrix are in good agreement with the experimental data of the Ni2+ ion for ZnS:Ni and ZnSe:Ni. This suggests that the d*(8) electron system instead of the d*(2) hole system should be used in the investigation of optical and magnetic properties of semiconductor containing Ni2+ ions. |
原文出处 | |
公开日期 | 2012-04-14 |
源URL | [http://ir.imr.ac.cn/handle/321006/37437] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | D. M. Lu,T. H. Yeom. Energy levels of the d*(8) electron and d*(2) hole system[J]. Physical Review B,1999,59(7):4881-4887. |
APA | D. M. Lu,&T. H. Yeom.(1999).Energy levels of the d*(8) electron and d*(2) hole system.Physical Review B,59(7),4881-4887. |
MLA | D. M. Lu,et al."Energy levels of the d*(8) electron and d*(2) hole system".Physical Review B 59.7(1999):4881-4887. |
入库方式: OAI收割
来源:金属研究所
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