The kinetics of indium/amorphous-selenium multilayer thin film reactions
文献类型：期刊论文
| 作者 | K. Lu ; M. L. Sui ; J. H. Perepezko ; B. Lanning |
| 刊名 | Journal of Materials Research
 |
| 出版日期 | 1999 |
| 卷号 | 14期号:3页码:771-779 |
| 关键词 | nucleation cuinse2 growth |
| ISSN号 | 0884-2914 |
| 中文摘要 | The reaction kinetics in vapor-deposited indium/amorphous-selenium (a - Se) multilayer thin films were studied using differential scanning calorimetry (DSC), x-ray diffraction (XRD), and transmission electron microscopy (TEM), A number of reactions were observed upon heating with characteristic temperatures which were found to be independent of the multilayer modulation wavelength. The initial interface reaction between In and a-Se is the formation of an In2Se phase. Kinetic analyses of the In2Se formation process combined with TEM observations indicated chat interface reaction is characterized by the two-dimensional growth of pre-existing In2Se regions formed during deposition to impingement in the plane of the original In/a-Se interface. The change of the density of In2Se grains with temperature was analyzed in terms of the derived kinetic parameters, which is consistent with TEM observations and the heat release measurements. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/37439]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | K. Lu,M. L. Sui,J. H. Perepezko,et al. The kinetics of indium/amorphous-selenium multilayer thin film reactions[J]. Journal of Materials Research,1999,14(3):771-779. |
| APA | K. Lu,M. L. Sui,J. H. Perepezko,&B. Lanning.(1999).The kinetics of indium/amorphous-selenium multilayer thin film reactions.Journal of Materials Research,14(3),771-779. |
| MLA | K. Lu,et al."The kinetics of indium/amorphous-selenium multilayer thin film reactions".Journal of Materials Research 14.3(1999):771-779. |
入库方式： OAI收割
来源：金属研究所
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