中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si

文献类型:期刊论文

作者G. G. Qin ; C. L. Heng ; G. F. Bai ; K. Wu ; C. Y. Li ; Z. C. Ma ; W. H. Zong ; L. P. You
刊名Applied Physics Letters
出版日期1999
卷号75期号:23页码:3629-3631
关键词amorphous si/sio2 superlattices visible photoluminescence quantum-confinement silicon luminescence germanium films
ISSN号0003-6951
中文摘要Nanoscale Ge/nanoscale SiO2 superlattices (SLs) with four periods have been grown using the two-electron-beam alternation evaporating technique. Visible electroluminescence (EL) from the semitransparent Au film/(nanoscale Ge/nanoscale SiO2) SL/p-Si structures was observed when the forward bias exceeded 5 V, and their EL power efficiencies were significantly higher than that of a semitransparent Au film/nanoscale Ge particles embedded SiO2 film/p-Si structure. The effects of thicknesses of nanoscale Ge layers in the SLs and of annealing temperatures on the EL were studied. It is found that the intensity and position of the major EL peak being located in a range of 640-680 nm vary synchronously, while the EL shoulder around 520 nm remains unchanged in wavelength with increasing Ge layer thickness. The results strongly support the viewpoint that EL originates from the luminescence centers in the SiO2 layers. (C) 1999 American Institute of Physics. [S0003-6951(99)01449-7].
原文出处://WOS:000083912800013
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/37474]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
G. G. Qin,C. L. Heng,G. F. Bai,et al. Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si[J]. Applied Physics Letters,1999,75(23):3629-3631.
APA G. G. Qin.,C. L. Heng.,G. F. Bai.,K. Wu.,C. Y. Li.,...&L. P. You.(1999).Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si.Applied Physics Letters,75(23),3629-3631.
MLA G. G. Qin,et al."Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si".Applied Physics Letters 75.23(1999):3629-3631.

入库方式: OAI收割

来源:金属研究所

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